features description applications ? high output power ? high reliability ? narrow emission angle symbol parameter min max units p d power dissipation 200 mw i f continuous forward current 100 ma i p peak forward current 1 a v r reverse voltage 5 v t stg storage temperature -25 +100 c t o operating temperature -25 +100 c t s soldering temperature* +240 c symbol characteristic test conditions min typ max units p o radiant intensity i f = 50 ma 50 90 mw/sr v f forward voltage i f = 100 ma 1.6 2.0 v v r reverse breakdown voltage i f = 100 a 5 30 v l p peak wavelength i f = 50 ma 880 nm l spectral bandwidth @ 50% (fwhm) i f = 50 ma 70 nm c t terminal capacitance v r = 0v, f = 1mhz 20 pf t r rise time i f = 20 ma 1.5 us t f fall time i f = 20 ma 0.8 us 0.039 [1.00] 0.059 [1.50] max ?0.197 [5.00] 0.342 [8.70] 0.984 [25.00] 0.059 [1.50] 0.020 [0.50] sq 2 places clear blue plastic ?0.220 [5.60] cathode anode 0.100 [2.54] l c l c 2 gaalas high power ir led emitters PDI-E809 package dimensions inch [ mm ] blue tint t 1 ? package the PDI-E809 is a high power 880 nm gaalas emitter, packaged in a low cost t 1 ? plastic package. ? photoelectric switches ? infrared sources ? optical readers * 1/16 inch from case for 3 seconds max. electro - optical characteristics rating (ta) = 2 3 c unless otherwise noted information in this technical datasheet is believed to be correct and reliable. however, no responsibility is assumed for possi ble inaccuracies or omission. specifications are subject to change without notice. ? 2007 adv anced photonix, inc. all rights reserved. advanced photonix inc. 1240 avenida acaso, camar illo ca 93012 ? phone (805) 987-0146 ? fax (805) 484-9935 ? www.advancedphotonix.com rev 5/30/07 absolute maximum rating (ta) = 2 3 c unless otherwise noted radiation pattern 0 20 40 60 80 100 -60 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 relative power output (%)
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